Comparison between models of insulator and semiconductor thin films islanding

TL;DR

This paper compares the physical mechanisms behind quantum dot formation in thin films produced by PVD-CVD and sol-gel methods, highlighting fundamental differences in their surface roughening processes.

Contribution

It introduces two simple physical models to explain the distinct phenomena leading to quantum dot formation in different synthesis approaches.

Findings

Different surface roughening behaviors in PVD-CVD and sol-gel methods

Physical models successfully explain QD formation mechanisms

Insights into optimizing quantum dot synthesis processes

Abstract

The synthesis of self-organized quantum dots (QD's) can be achieved through bottom up layer by layer deposition processes as chemical vapor deposition (CVD) or physical vapor deposition (PVD). However, QD's may also be synthesized via sol-gel route, which involves a spontaneous evolution from thin films to discrete QD's without further deposition. The aim of the paper is to discuss and compare the physical phenomena involved in QD's formation which initiate from thin film surface roughening between PVD-CVD and sol-gel synthesis approaches. We propose two simple physical models which are relevant to explain the fundamental differences between those methods.