Electroluminescence emission from polariton states in GaAs-based semiconductor microcavities

TL;DR

This paper demonstrates electroluminescence from polariton states in GaAs microcavities, showing a transition from strong to weak coupling with increased current, which is promising for electrically driven polariton lasers.

Contribution

First observation of electrically excited polariton electroluminescence in GaAs microcavities, highlighting potential for polariton laser development.

Findings

Electroluminescence from polariton states observed

Transition from strong to weak coupling with increased current

Potential for electrically driven polariton lasers

Abstract

The authors report the observation of electroluminescence from GaAs-based semiconductor microcavities in the strong coupling regime. At low current densities the emission consists of two peaks, which exhibit anti-crossing behaviour as a function of detection angle and thus originate from polariton states. With increasing carrier injection we observe a progressive transition from strong to weak coupling due to screening of the exciton resonance by free carriers. The demonstration that polariton emission can be excited by electrical injection is encouraging for future development of polariton lasers.