Multi-layer atom chips for versatile atom micro manipulation

TL;DR

This paper introduces a multi-layer atom chip fabricated with advanced lithography techniques, enabling complex wire configurations and improved control for manipulating ultra cold quantum gases and Bose-Einstein condensates.

Contribution

It presents a novel multi-layer fabrication method combining UV and electron-beam lithography for versatile atom chip design.

Findings

Supports high current densities >6 x 10^7 A/cm^2

Achieves high voltages up to 65 V across micron-scale gaps

Successfully produces Bose-Einstein condensates using the new chip design

Abstract

We employ a combination of optical UV- and electron-beam-lithography to create an atom chip combining sub-micron wire structures with larger conventional wires on a single substrate. The new multi-layer fabrication enables crossed wire configurations, greatly enhancing the flexibility in designing potentials for ultra cold quantum gases and Bose-Einstein condensates. Large current densities of >6 x 10^7 A/cm^2 and high voltages of up to 65 V across 0.3 micron gaps are supported by even the smallest wire structures. We experimentally demonstrate the flexibility of the next generation atom chip by producing Bose-Einstein condensates in magnetic traps created by a combination of wires involving all different fabrication methods and structure sizes.