Abnormal Resistance Switching Behaviors of NiO Thin Films: Possible Occurrence of Simultaneous Formation and Rupture of Conducting Channels

TL;DR

This paper investigates abnormal resistance switching in NiO thin films, revealing that simultaneous formation and rupture of conducting channels can occur through avalanche processes, challenging conventional understanding.

Contribution

It introduces a model explaining abnormal switching behaviors involving concurrent filament formation and rupture in NiO films.

Findings

Abnormal switching behaviors observed in NiO films.

Formation and rupture of filaments can occur simultaneously.

Avalanche processes drive the resistance changes.

Abstract

We report the detailed current-voltage (I-V) characteristics of resistance switching in NiO thin films. In unipolar resistance switching, it is commonly believed that conducting filaments will rupture when NiO changes from a low resistance to a high resistance state. However, we found that this resistance switching can sometimes show abnormal behavior during voltage- and current-driven I-V measurements. We used the random circuit breaker network model to explain how abnormal switching behaviors could occur. We found that this resistance change can occur via a series of avalanche processes, where conducting filaments could be formed as well as ruptured.