Oblique Hanle Effect in Semiconductor Spin Transport Devices

TL;DR

This paper investigates the oblique Hanle effect in semiconductor spin transport devices, combining theoretical models with experimental data to understand how oblique magnetic fields influence spin precession and dephasing in silicon devices.

Contribution

It provides a detailed comparison of theoretical and experimental results for oblique Hanle measurements, highlighting the effects of fixed in-plane magnetic fields on spin transport.

Findings

Oblique magnetic fields cause non-trivial effects on spin precession.

Hanle peak-widening occurs under diffusion-dominated transport with in-plane bias.

Theoretical models align with experimental observations of oblique Hanle effects.

Abstract

Spin precession and dephasing ("Hanle effect") provides an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with experimental data from drift-dominated silicon spin-transport devices, illustrating the non-trivial consequences of employing oblique magnetic fields (due to misalignment or intentional, fixed in-plane field components) to measure the effects of spin precession. Model results are also calculated for Hanle measurements under conditions of diffusion-dominated transport, revealing an expected Hanle peak-widening effect induced by the presence of fixed in-plane magnetic bias fields.