The Kondo effect of surface excitons
P. D. Altukhov
TL;DR
This paper reports the observation of the Kondo effect in surface excitons within a dense 2D electron gas, revealing how Kondo correlations influence exciton paramagnetism through anisotropic luminescence reduction.
Contribution
It introduces the first experimental evidence of the Kondo effect affecting surface excitons in silicon MOS structures.
Findings
Observation of a recombination line in luminescence spectra
Detection of anisotropic paramagnetic reduction
Evidence of Kondo correlations influencing exciton behavior
Abstract
A recombination radiation line of real excitons in dense two-dimensional electron gas at the [100] silicon surface is observed in luminescence spectra of metal-oxide-semiconductor (MOS) structures. A new effect of anisotropic paramagnetic reduction of the luminescence line indicates a strong influence of the Kondo correlations on electron paramagnetism of the excitons.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Electron and X-Ray Spectroscopy Techniques