Epitaxial graphene transistors on SiC substrates

TL;DR

This paper demonstrates large-scale fabrication and systematic analysis of epitaxial graphene transistors on SiC substrates, highlighting their high mobility and potential for electronic applications despite inherent leakage currents.

Contribution

First demonstration of large arrays of epitaxial graphene transistors on SiC using standard microelectronics techniques with detailed substrate analysis.

Findings

Mobility up to 5000 cm2/Vs

Ion/Ioff ratios up to 7

Negligible band gaps causing leakage

Abstract

This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible alternative to silicon-based electronics. This enthusiasm was spurred by high carbon nanotube carrier mobilities. However, nanotube production, placement, and control are all serious issues. Graphene, a thin sheet of graphitic carbon, can overcome some of these problems and therefore is a promising new electronic material. Although graphene devices have been built before, in this work we provide the first demonstration and systematic evaluation of arrays of a large number of transistors entirely produced using standard microelectronics methods. Graphene devices presented feature high-k dielectric, mobilities up to 5000 cm2/Vs and, Ion/Ioff ratios of up to 7, and are methodically analyzed to provide insight into the substrate properties. Typical of graphene, these micron-scale devices have negligible band gaps and therefore large leakage currents.