Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions

TL;DR

This paper reports on the observation of tunneling anisotropic magnetoresistance in Co/AlOx/Au tunnel junctions, revealing anisotropic effects dependent on magnetization orientation, with implications for spintronics devices.

Contribution

It demonstrates the existence of tunneling anisotropic magnetoresistance in nano-scaled Co/AlOx/Au junctions and links it to spin-orbit interaction effects.

Findings

Tunneling magnetoresistance depends on magnetization orientation.

The effect is attributed to two-step magnetization reversal.

Potential applications in spintronics with a single ferromagnetic layer.

Abstract

We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer.