Spin Dephasing in Drift-Dominated Semiconductor Spintronics Devices

TL;DR

This paper presents a model analyzing how spin dephasing in semiconductor spintronic devices is influenced by voltage and temperature, highlighting that in ohmic regimes, dephasing depends mainly on voltage drop rather than transit length.

Contribution

It introduces a mathematical model that predicts spin dephasing effects based on voltage and temperature, validated against experimental data in silicon devices.

Findings

Dephasing is independent of transit length in ohmic regime.

Dephasing is primarily determined by voltage drop across the device.

Model predictions align with experimental measurements.

Abstract

A spin transport model is employed to study the effects of spin dephasing induced by diffusion-driven transit-time uncertainty through semiconductor spintronic devices where drift is the dominant transport mechanism. It is found that in the ohmic regime, dephasing is independent of transit length, and determined primarily by voltage drop across the spin transport region. The effects of voltage and temperature predicted by the model are compared to experimental results from a 350-micron-thick silicon spin-transport device using derived mathematical expressions of spin dephasing.