Controllable spin transport in ferromagnetic graphene junctions

TL;DR

This paper demonstrates that gate voltage can control and reverse spin currents in ferromagnetic graphene junctions, offering a promising approach for spintronic device development.

Contribution

It introduces a method to tune and reverse spin currents in ferromagnetic graphene using gate voltage, highlighting high controllability in spin transport.

Findings

Spin current oscillates with chemical potential due to exchange field.

Gate voltage enables control and reversal of spin current.

Potential application in spintronics devices.

Abstract

We study spin transport in normal/ferromagnetic/normal graphene junctions where a gate electrode is attached to the ferromagnetic graphene. We find that due to the exchange field of the ferromagnetic graphene, spin current through the junctions has an oscillatory behavior with respect to the chemical potential in the ferromagnetic graphene, which can be tuned by the gate voltage. Especially, we obtain a controllable spin current reversal by the gate voltage. Our prediction of high controllability of spin transport in ferromagnetic graphene junction may contribute to the development of the spintronics.