Unified electronic phase diagram for hole-doped high-Tc cuprates
T. Honma, P. H. Hor

TL;DR
This paper constructs a unified electronic phase diagram for hole-doped high-Tc cuprates, revealing how characteristic temperatures and energies evolve with doping and their relation to superconductivity and pseudogap phases.
Contribution
It introduces a comprehensive phase diagram based solely on experimental data, highlighting the asymmetric dome shape and the doping limits of high-Tc physics across different cuprates.
Findings
Characteristic temperatures and energies converge at specific doping levels.
Pseudogap phase precedes and coexists with superconductivity.
High-Tc physics ends at a doping level 1.3 times the optimal doping.
Abstract
We have analyzed various characteristic temperatures and energies of hole-doped high-Tc cuprates as a function of a dimensionless hole-doping concentration (pu). Entirely based on the experimental grounds we construct a unified electronic phase diagram (UEPD), where three characteristic temperatures (T*'s) and their corresponding energies (E*'s) converge as pu increases in the underdoped regime. T*'s and E*'s merge together with the Tc curve and 3.5kBTc curve at pu - 1.1 in the overdoped regime, respectively. They finally go to zero at pu - 1.3. The UEPD follows an asymmetric half-dome-shaped Tc curve in which Tc appears at pu - 0.4, reaches a maximum at pu - 1, and rapidly goes to zero at pu - 1.3. The asymmetric half-dome-shaped Tc curve is at odds with the well-known symmetric superconducting dome for La2-xSrxCuO4 (SrD-La214), in which two characteristic temperatures and energies…
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