Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor
Rongwei Hu, K. J. Thomas, Y. Lee, T. Vogt, E. S. Choi, V. F. Mitrovic,, R. P. Hermann, F. Grandjean, P. C. Canfield, J. W. Kim, A. I. Goldman, C., Petrovic
TL;DR
This paper reports a significant positive magnetoresistance in FeSb₂, a nearly magnetic semiconductor, highlighting the roles of orbital effects and quantum interference in its magnetic field response.
Contribution
It introduces the observation of colossal positive magnetoresistance in a doped nearly magnetic semiconductor and discusses underlying mechanisms.
Findings
Colossal positive magnetoresistance observed in FeSb₂
Orbital MR and quantum interference contribute to resistivity changes
Enhanced magnetic field response linked to nearly magnetic properties
Abstract
We report on a positive colossal magnetoresistance (MR) induced by metallization of FeSb, a nearly magnetic or "Kondo" semiconductor with 3d ions. We discuss contribution of orbital MR and quantum interference to enhanced magnetic field response of electrical resistivity.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.