Few layers graphene on 6H-SiC(000-1): an STM study

TL;DR

This study uses STM to analyze few-layer graphene on 6H-SiC, revealing superstructures and stacking faults that suggest electronic decoupling similar to single-layer graphene.

Contribution

It provides direct STM evidence of azimuthal disorder and stacking faults in few-layer graphene on SiC, linking structural features to electronic properties.

Findings

Identification of Moiré patterns indicating layer misorientation

Evidence of stacking faults affecting electronic decoupling

STM data showing properties akin to single-layer graphene

Abstract

We have analyzed by Scanning Tunnelling Microscopy (STM) thin films made of few (3-5) graphene layers grown on the C terminated face of 6H-SiC in order to identify the nature of the azimuthal disorder reported in this material. We observe superstructures which are interpreted as Moir\'e patterns due to a misorientation angle between consecutive layers. The presence of stacking faults is expected to lead to electronic properties reminiscent of single layer graphene even for multilayer samples. Our results indicate that this apparent electronic decoupling of the layers can show up in STM data.