A Modular High-Temperature Measurement Set-Up for Semiconductor Device Characterization

TL;DR

This paper presents a new high-temperature measurement setup for semiconductor devices, enabling characterization up to 500°C, demonstrated through experiments on silicon and SiC devices, complemented by numerical simulations for deeper insights.

Contribution

The paper introduces a modular high-temperature measurement system specifically designed for semiconductor device characterization, including detailed equipment description and validation through practical measurements and simulations.

Findings

Successful measurement of silicon VDMOSFET and IGBT characteristics at high temperatures

Validation of physical models through numerical simulations

Enhanced understanding of temperature-dependent device behavior

Abstract

We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room temperature up to 500 degrees C and higher. A detailed description of the experimental aquipment is given. Its practical use is demonstrated by measuring temperature-dependent charcteristics of silicon VDMOSFET and IGBT devices as well as SiC-diodes. For the silicon devices, numerical simulations based on recently developed high temperature physical models were also performed in order to gain a deeper understanding of the measured data, together with a revalidation of the model parameters.