Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures
A.W. Rushforth, E. De Ranieri, J. Zemen, J. Wunderlich, K.W. Edmonds,, C.S. King, E. Ahmad, R.P. Campion, C.T. Foxon, B.L. Gallagher, K. Vyborny, J., Kucera, T. Jungwirth
TL;DR
This paper demonstrates voltage-controlled manipulation of magnetic anisotropy in a hybrid ferromagnetic-semiconductor/piezoelectric device, enabling dynamic magnetic reorientation and potential new functionalities.
Contribution
It introduces a method for voltage-controlled magnetic anisotropy in (Ga,Mn)As devices bonded to piezoelectric transducers, combining experimental and theoretical insights.
Findings
Large magnetic easy axis reorientation under uniaxial strain
Electrical magnetization switching demonstrated
Microscopic understanding via mean-field kinetic-exchange model
Abstract
We demonstrate dynamic voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis which is detected by measuring longitudinal and transverse anisotropic magnetoresistance coefficients. Calculations based on the mean-field kinetic-exchange model of (Ga,Mn)As provide microscopic understanding of the measured effect. Electrically induced magnetization switching and detection of unconventional crystalline components of the anisotropic magnetoresistance are presented, illustrating the generic utility of the piezo voltage control to provide new device functionalities and in the research of micromagnetic and magnetotransport phenomena in diluted magnetic semiconductors.
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