The strongest size in the inverse Hall-Petch relationship
Chang Q. Sun

TL;DR
This paper develops an analytical model incorporating bond-order-length-strength and melting criteria to explain the inverse Hall-Petch relationship in nanocrystals, revealing the roles of energy densification, dislocation dynamics, and phase states.
Contribution
It introduces a new analytical expression for the size and temperature dependence of nanograin strength, integrating multiple mechanisms to explain the inverse Hall-Petch behavior.
Findings
Size-induced energy densification causes the IHPR.
Competition between dislocation inhibition and activation shapes the IHPR.
Presence of a soft quasisolid phase explains nanostructure softening.
Abstract
Incorporating the bond-order-length-strength correlation mechanism [Sun CQ, Prog Solid State Chem 35, 1 -159 (2007)] and Borns criterion for melting [J. Chem. Phys. 7, 591(1939)] into the conventional Hall-Petch relationship has turned out an analytical expression for the size and temperature dependence of the mechanical strength of nanograins, known as the inverse Hall-Petch relationship (IHPR), that has long been a topic under debate regarding the possible mechanisms. Reproduction of the measured IHPR of Ni, NiP and TiO2 nanocrystals revealed that: (i) the size induced energy densification and cohesive energy loss of nanograins originates the IHPR that could be activated in the contact mode of plastic deformation detection; (ii) the competition between the inhibition of atomic dislocations, via the surface energy density gain and the strain work hardening, and the activation for…
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Taxonomy
TopicsQuantum many-body systems · Quantum and electron transport phenomena · Cold Atom Physics and Bose-Einstein Condensates
