Characterization of ZnO:Si Nanocomposite Films Grown by Thermal Evaporation

TL;DR

This study reports the synthesis and characterization of ZnO:Si nanocomposite films via thermal evaporation, highlighting their stable structure and photoluminescent properties suitable for optoelectronic applications.

Contribution

It introduces a method to grow stable ZnO:Si nanocomposite films with embedded ZnO nanocrystals exhibiting specific photoluminescence features.

Findings

ZnO nanocrystals embedded in silicon show strong photoluminescence at 520nm.

The nanocomposite films are structurally stable over time.

Good dispersion prevents agglomeration of ZnO nanocrystals.

Abstract

Nanocomposite thin films of Zinc Oxide and Silicon were grown by co-evaporating powdered ZnO and Si. This resulted in nanocrystallites of ZnO being embedded in Silicon. The mismatch in crystal structures of constituent materials result in the ZnO nanocrystals to exist in a state of stress. This along with oxygen vacancies in the samples result in good Photoluminescence emission at 520nm. Also, Silicon background gave a photoluminescence emission at 620nm. The structure was found quite stable over time since the homgenously dispersed ZnO nanocrystals do not agglomerate. The nanocomposites promises to be a useful candidate for future optoelectronic devices.