Electronic properties of bilayer and multilayer graphene
Johan Nilsson, A. H. Castro Neto, F. Guinea, N. M. R. Peres

TL;DR
This paper investigates how site dilution disorder affects the electronic properties of bilayer and multilayer graphene, providing analytical insights into conductivity, density of states, and impurity effects.
Contribution
It introduces a simplified model for disorder in multilayer graphene and derives analytical results for electronic properties using the coherent potential approximation.
Findings
Impurities can enhance low-doping conductivity in the c-axis response.
Analytical expressions for self-energies and density of states are obtained.
Impurity effects in biased bilayer graphene are also analyzed.
Abstract
We study the effects of site dilution disorder on the electronic properties in graphene multilayers, in particular the bilayer and the infinite stack. The simplicity of the model allows for an easy implementation of the coherent potential approximation and some analytical results. Within the model we compute the self-energies, the density of states and the spectral functions. Moreover, we obtain the frequency and temperature dependence of the conductivity as well as the DC conductivity. The c-axis response is unconventional in the sense that impurities increase the response for low enough doping. We also study the problem of impurities in the biased graphene bilayer.
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