Spectroscopy of electronic defect states in Cu(In, Ga)(S, Se)$_2$-based heterojunctions and Schottky diodes under damp-heat exposure

TL;DR

This study investigates how damp-heat exposure affects defect states and device performance in Cu(In, Ga)(S, Se)$_2$-based heterojunctions and Schottky diodes, revealing degradation mechanisms relevant for photovoltaic stability.

Contribution

It provides detailed spectroscopic analysis of defect state changes under damp-heat conditions, highlighting the impact on device efficiency and interface properties.

Findings

Damp-heat exposure reduces device fill factor and open-circuit voltage.

Defect activation energy increases, indicating reduced band bending.

Fermi-level pinning is lifted at the buffer/chalcopyrite interface.

Abstract

The changes of defect characteristics induced by accelerated lifetime tests on the heterostructure n-ZnO/i-ZnO/CdS/Cu(In, Ga)(S, Se)$_2$/Mo relevant for photovoltaic energy conversion are investigated. We subject heterojunction and Schottky devices to extended damp heat exposure at 85$^{\circ}$C ambient temperature and 85% relative humidity for various time periods. In order to understand the origin of the pronounced changes of the devices, we apply current--voltage and capacitance--voltage measurements, admittance spectroscopy, and deep-level transient spectroscopy. The fill factor and open-circuit voltage of test devices are reduced after prolonged damp heat treatment, leading to a reduced energy conversion efficiency. We observe the presence of defect states in the vicinity of the CdS/chalcopyrite interface. Their activation energy increases due to damp heat exposure, indicating a reduced band bending at the Cu(In, Ga)(S, Se)$_2$ surface. The Fermi-level pinning at the buffer/chalcopyrite interface, maintaining a high band bending in as-grown cells, is lifted due to the damp-heat exposure. We also observe changes in the bulk defect spectra due to the damp-heat treatment.