Side-gated transport in FIB-fabricated multilayered graphene nanoribbons

TL;DR

This paper demonstrates a resist-free FIB process to create multilayered graphene nanoribbons with side-gated transport properties, analyzing their electronic behavior down to 40 K using a tunneling junction model.

Contribution

It introduces a novel resist-free FIB fabrication method for multilayered graphene nanoribbons with integrated side gates.

Findings

Successful patterning of sub-100nm graphene ribbons

Observation of side-gated transport behavior

Interpretation with a 1D tunneling junction model

Abstract

In this Letter, we present the patterning, exfoliation and micromanipulation of thin graphitic discs which are subsequently connected and patterned into sub-100nm wide ribbons with a resist-free process using Focused Ion Beam (FIB) lithography and deposition. The electronic transport properties of the double side-gated nanoribbons are then investigated down to 40 K and interpreted with a simple model of 1D array of tunnelling junctions.