A current-voltage model for Schottky-barrier graphene based transistors

TL;DR

This paper introduces a fast, low-complexity analytical model for the current-voltage behavior of graphene-based Schottky-barrier transistors, accurately capturing tunneling and thermionic currents without extensive computations.

Contribution

It provides a novel analytical model that simplifies and accelerates the simulation of GNR FETs, bypassing the need for self-consistent electrostatic calculations.

Findings

Model accurately predicts I-V characteristics

Simulation runs in seconds on a standard PC

Includes tunneling and thermionic current effects

Abstract

A low complexity computational model of the current-voltage characteristics for graphene nano-ribbon (GNR) field effect transistors (FET), able to simulate a hundred of points in few seconds using a PC, is presented. For quantum capacitance controlled devices, self-consistent calculations of the electrostatic potential can be skipped. Instead, analytical closed-form electrostatic potential from Laplace's equation yields accurate results compared with that obtained by self-consistent Non-Equilibrium Green's Functions (NEGF) method. The model includes both tunnelling current through the Schottky barrier (SB) at the contact interfaces and thermionic current above the barrier, properly capturing the effect of arbitrary physical and electrical parameters.