Lasing of donor-bound excitons in ZnSe microdisks

TL;DR

This paper demonstrates low-threshold lasing from fluorine-bound excitons in ZnSe microdisks, highlighting their potential for quantum optical applications such as quantum memories and inversionless lasing.

Contribution

It reports the first observation of lasing from fluorine-bound excitons in ZnSe microdisks, with experimental confirmation of bound-exciton transitions causing lasing.

Findings

Lasing observed in 3 and 6 micron ZnSe microdisks.

Photoluminescence confirms bound-exciton origin.

Potential for quantum optical device applications.

Abstract

Excitons bound to flourine atoms in ZnSe have the potential for several quantum optical applications. Examples include optically accessible quantum memories for quantum information processing and lasing without inversion. These applications require the bound-exciton transitions to be coupled to cavities with high cooperativity factors, which results in the experimental observation of low-threshold lasing. We report such lasing from fluorine-doped ZnSe quantum wells in 3 and 6 micron microdisk cavities. Photoluminescence and selective photoluminescence spectroscopy confirm that the lasing is due to bound-exciton transitions.