Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer

TL;DR

This study demonstrates electron resonant tunneling through InAs/GaAs quantum dots in a Schottky diode with an AlAs barrier, reducing thermal current and enabling high-temperature operation at 77K, supported by experimental and theoretical analysis.

Contribution

It introduces a quantum dot Schottky diode with an AlAs insertion layer that enhances resonant tunneling performance at elevated temperatures.

Findings

Thermal current is significantly reduced by the AlAs barrier.

Resonant tunneling observed at 77K under various bias conditions.

Experimental results align with theoretical models.

Abstract

Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current is effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions is observed at relatively high temperature of 77K. The ground states of quantum dots are found to be at ~0.19eV below the conduction band of GaAs matrix. The theoretical computations are in conformity with experimental data.