Room temperature observation of electron resonant tunneling through InAs/AlAs quantum dots

TL;DR

This paper reports the first observation of electron resonant tunneling through InAs/AlAs quantum dots at room temperature, demonstrating quantum dot behavior in III-V materials under practical conditions.

Contribution

It presents the first experimental evidence of room temperature resonant tunneling in III-V quantum-dot devices, expanding potential applications.

Findings

Resonant tunneling observed at 300K and 77K

Hysteresis linked to quantum dot charging effects

Quantum dots enable electron transport at room temperature

Abstract

Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current, and they make up the total electron transport in devices. Steps in current-voltage characteristics and peaks in capacitance-voltage characteristics are explained as electron resonant tunneling via quantum dots at 77K or 300K, and this is the first time that resonant tunneling is observed at room temperature in III-V quantum-dot materials. Hysteresis loops in the curves are attributed to hot electron injection/emission process of quantum dots, which indicates the concomitant charging/discharging effect.