The epitaxial-graphene/graphene-oxide junction, an essential step towards epitaxial graphene electronics

TL;DR

This paper demonstrates the creation of all-graphene electronic devices using graphene oxide as a bridge, revealing tunable Schottky barriers and high mobility comparable to silicon, advancing epitaxial graphene electronics.

Contribution

It introduces a method to fabricate all-graphene devices with tunable barriers using graphene oxide, including in situ local oxidation of epitaxial graphene.

Findings

Schottky barriers of about 0.7 eV at graphene/GO junctions

Barrier height reduces after annealing at 180°C

GO mobility exceeds 850 cm²/Vs, comparable to silicon

Abstract

Graphene oxide (GO) flakes have been deposited to bridge the gap between two epitaxial graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers (SB) at the graphene/graphene oxide junctions, as a consequence of the band-gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 $^\circ$C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm$^2$/Vs, rivaling silicon. {\it In situ} local oxidation of patterned epitaxial graphene has been achieved.