Electrical detection of spin echoes for phosphorus donors in silicon

TL;DR

This paper demonstrates electrical detection of spin echoes in phosphorus donors in silicon, revealing decoherence processes and enabling the study of spin dynamics crucial for quantum computing applications.

Contribution

It introduces electrical spin echo tomography for phosphorus donors in silicon, providing a new method to analyze spin coherence and decoherence in realistic qubit devices.

Findings

Echo decay time constant of 1.7 microseconds observed

Good agreement with theoretical models of donor-interface interactions

Electrical detection enables studying spin dynamics in device environments

Abstract

The electrical detection of spin echoes via echo tomography is used to observe decoherence processes associated with the electrical readout of the spin state of phosphorus donor electrons in silicon near a SiO$_2$ interface. Using the Carr-Purcell pulse sequence, an echo decay with a time constant of $1.7\pm0.2 \rm{\mu s}$ is observed, in good agreement with theoretical modeling of the interaction between donors and paramagnetic interface states. Electrical spin echo tomography thus can be used to study the spin dynamics in realistic spin qubit devices for quantum information processing.