Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor

TL;DR

This paper demonstrates a highly sensitive, broadband RF-SET using single-walled carbon nanotube quantum dots, achieving superior charge sensitivity and gain-bandwidth performance at cryogenic temperatures.

Contribution

It introduces a novel RF-SET based on carbon nanotubes operating in the strong tunneling regime with significantly improved sensitivity and bandwidth.

Findings

Charge sensitivity of 2.3e-6 e/Hz^(1/2) at 4.2 K

Bandwidth of 85 MHz

Gain-bandwidth product of 3.7e13 Hz^(3/2)/e

Abstract

We have investigated radio-frequency single-electron transistor (RF-SET) operation of single-walled carbon nanotube quantum dots in the strong tunneling regime. At 4.2 K and carrier frequency 754.2 MHz, we reach a charge sensitivity of 2.3e-6 e/Hz^(1/2) over a bandwidth of 85 MHz. Our results indicate a gain-bandwidth product of 3.7e13 Hz^(3/2)/e, which is by one order of magnitude better than for typical RF-SETs.