Gaped graphene bilayer: disorder and magnetic field effects

TL;DR

This paper investigates how disorder and magnetic fields affect the electronic properties of gapped bilayer graphene, revealing the gap's stability and Landau level formation through theoretical modeling.

Contribution

It provides a detailed theoretical analysis of the stability of the energy gap and Landau levels in gapped bilayer graphene under disorder and magnetic fields.

Findings

The energy gap remains stable despite diagonal disorder.

Landau levels form clearly at intermediate magnetic fields.

Cyclotron effective mass is computed in the low-field regime.

Abstract

Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene bilayer in the presence of disorder, perpendicular magnetic field, and transverse electric field. We show that the gap is rather stable in the presence of diagonal disorder. We compute the cyclotron effective mass in the semi-classical approximation, valid at low magnetic fields. Landau level formation is clearly seen in zigzag and armchair ribbons of the gaped bilayer at intermediate magnetic fields.