Strain-assisted spin manipulating and the discerption of strain-induced spin splitting

TL;DR

This paper demonstrates that tuning strain in semiconductor quantum wells enhances electron spin manipulation efficiency and offers insights into strain-induced spin splitting effects, providing a new approach to understanding experimental phenomena.

Contribution

It introduces a method to distinguish different types of strain-induced spin splittings via electron-dipole-spin-resonance measurements in quantum wells.

Findings

Strain tuning improves spin manipulation efficiency.

Different spin splitting types can be distinguished experimentally.

Strain effects vary across different semiconductor systems.

Abstract

We show that the efficiency of manipulating electron spin in semiconductor quantum wells can be enhanced by tuning the strain strength. The effect combining intrinsic and strain-induced spin splitting varies for different systems, which provides an alternative route to understand the experimental phenomena brought in by the strain. The types of spin splittings caused by strain are suggested to be distinguished by the measurement of the electron-dipole-spin-resonance intensity through changing the direction of the $ac$ electric field in the $x$-$y$ plane of the quantum well and tuning the strain strengths.