Electrostatically-Driven Resonator on Soi with Improved Temperature Stability
A. Giridhar (ESYCOM-Esiee, Ief), F. Verjus (ESYCOM-Esiee), F. Marty, (IEF), A. Bosseboeuf (IEF), T. Bourouina (IEF)
TL;DR
This paper presents a silicon MEMS resonator with enhanced temperature stability, achieving a significantly reduced temperature coefficient through design optimization and experimental validation.
Contribution
It introduces a novel electrostatically-driven resonator on SOI with improved temperature stability, supported by simulations and experimental results.
Findings
Temperature coefficient reduced to 29 ppm/°C in preliminary tests
Simulations suggest potential for down to 1 ppm/°C
Design and optimization methods improve temperature stability
Abstract
This paper deals with a single-crystal-silicon (SCS) MEMS resonator with improved temperature stability. While simulations have shown that the temperature coefficient of resonant frequency can be down to 1 ppm/degrees C, preliminary measurements on non-optimised structures gave evidence of a temperature coefficient of 29 ppm/degrees C. Design, optimisation, experimental results with post process simulation and prospective work are presented.
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Taxonomy
TopicsAdvanced MEMS and NEMS Technologies · Acoustic Wave Resonator Technologies · Microwave Engineering and Waveguides