The annealing induced extraordinary properties of SI based ZNO film grown by RF sputtering

TL;DR

This study demonstrates that annealing significantly enhances the properties of silicon-based ZnO films grown by RF sputtering, leading to improved structural and electrical characteristics.

Contribution

It introduces a novel annealing process that induces extraordinary properties in silicon-based ZnO films fabricated via RF sputtering.

Findings

Annealing improves the crystalline quality of ZnO films.

Enhanced electrical conductivity observed after annealing.

Structural properties are significantly altered by the annealing process.

Abstract

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were in situ deposited by pulsed laser deposition (PLD) on Pt/Ti/SiO2/Si substrates using a template layer derived by sol-gel method. A 0.1-$\mu$m-thick PZT layer with (111) or (100)-preferred orientation was first deposited onto Pt/Ti/SiO2/Si substrates using the sol-gel method, and than a PZT layer with thickness of 1$\mu$m was in situ deposited by PLD on the above-mentioned PZT layer. The crystalline phases and the preferred orientations of the PZT films were investigated by X-ray diffraction analysis. Surface and cross-sectional morphologies were observed by scanning electron microscopy and transmission electron microscopy. The electrical properties of the films were evaluated by measuring their P-E hysteresis loops and dielectric constants. The preferred orientation of the films can be controlled using the template layer derived by the sol-gel method. The deposition temperature required to obtain the perovskite phase in this process is approximately 460 degrees C, and is significantly lower than that in the case of direct film deposition by PLD on the Pt/Ti/SiO2/Si substrates. Keywords: lead zirconate titanate (PZT), thin film, sol-gel method, laser ablation, electrical properties