Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis

TL;DR

This paper introduces a scalable method for fabricating high-performance, solution-processed, local-gated carbon nanotube FETs using AC dielectrophoresis, enabling large-scale CMOS-compatible nanoelectronics.

Contribution

It presents a novel, simple technique for assembling single-walled carbon nanotube FETs with local gating via AC dielectrophoresis, improving device performance and scalability.

Findings

Devices show on-off ratios of 10^4.

Maximum subthreshold swing of 170 mV/dec.

Method enables large-scale CMOS-compatible fabrication.

Abstract

We present a simple and scalable technique for the fabrication of solution processed & local gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on directed assembly of individual single wall carbon nanotube from dichloroethane via AC dielectrophoresis (DEP) onto pre-patterned source and drain electrodes with a local aluminum gate in the middle. Local-gated CNT-FET devices display superior performance compared to global back gate with on-off ratios 10^4 and maximum subthreshold swings of 170 mV/dec. The local bottom-gated DEP assembled CNT-FETs will facilitate large scale fabrication of complementary metal-oxide-semiconductor (CMOS) compatible nanoelectronic devices.