Characterization of half-metallic L2_1-phase Co_2FeSi full-Heusler alloy films formed by rapid thermal annealing

TL;DR

This paper presents a rapid thermal annealing method to produce highly oriented Co_2FeSi full-Heusler alloy films on SOI substrates, demonstrating potential for spin transistor applications.

Contribution

The study introduces a novel RTA-induced silicidation process to form L2_1-phase Co_2FeSi films compatible with CMOS technology.

Findings

Achieved (110)-oriented L2_1-phase films at 700°C

Crystallographic and magnetic properties match bulk alloys

Technique suitable for spin transistor source/drain fabrication

Abstract

The authors developed a preparation technique of Co_2FeSi full-Heusler alloy films with the L2_1-ordered structure on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The Co_2FeSi full-Heusler alloy films were successfully formed by RTA-induced silicidation reaction between an ultrathin SOI (001) layer and Fe/Co layers deposited on it. The highly (110)-oriented L2_1-phase polycrystalline full-Heusler alloy films were obtained at the RTA temperature of 700 C. Crystallographic and magnetic properties of the RTA-formed full-Heusler alloy films were qualitatively the same as those of bulk full-Heusler alloy. This technique is compatible with metal source/drain formation process in advanced CMOS technology and would be applicable to the fabrication of the half-metallic source/drain of MOSFET type of spin transistors.