The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs

TL;DR

This study investigates how temperature and gas flow rate influence the yield of mm-scale rubrene crystals grown via physical vapour transport, aiming to optimize conditions for high-quality organic FETs.

Contribution

It provides the first detailed analysis of how specific growth parameters affect rubrene crystal yield in physical vapour transport methods.

Findings

Higher temperature increases crystal yield.

Optimal gas flow rate improves crystal size and quality.

Yield depends strongly on growth conditions.

Abstract

There has recently been significant interest in rubrene single-crystals grown using physical vapour transport techniques due to their application in high-mobility organic field-effect transistor (OFET) devices. Despite numerous studies of the electrical properties of such crystals, there has only been one study to date focussing on characterising and optimising the crystal growth as a function of the relevant growth parameters. Here we present a study of the dependence of the yield of useful crystals (defined as crystals with at least one dimension of order 1 mm) on the temperature and volume flow of carrier gas used in the physical vapour growth process.