A Dual Gate Spin Field Effect Transistor With Very Low Switching Voltage and Large ON-to-OFF Conductance Ratio

TL;DR

This paper introduces a dual-gate SpinFET with ferromagnetic contacts that switches with millivolt bias changes, achieving low power consumption and high ON/OFF conductance ratio suitable for logic circuits.

Contribution

It presents a novel dual-gate SpinFET design with independent gate biasing, enabling ultra-low voltage switching and high conductance ratio at cryogenic temperatures.

Findings

Switching achieved with a few millivolts bias change

ON/OFF conductance ratio remains ~60 up to 10 K

Device exhibits excellent inverter characteristics

Abstract

We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with a few mV change in the differential bias between the two pads, resulting in extremely low dynamic power dissipation during switching. The ratio of ON to OFF conductance remains fairly large (~ 60) up to a temperature of 10 K. This device also has excellent inverter characteristics, making it attractive for applications in low power and high density Boolean logic circuits.