Tuning impurity states in bilayer graphene

TL;DR

This paper investigates how impurity states in bilayer graphene can be controlled via external electric fields, revealing differences from single-layer graphene due to interlayer interactions.

Contribution

It provides a detailed analysis of impurity states in bilayer graphene, highlighting the effects of interlayer hopping and external electric bias on these states.

Findings

Impurity states differ at two non-equivalent sites in bilayer graphene.

External electric bias can tune impurity states by altering the band structure.

Impurity states are influenced by interlayer hopping effects.

Abstract

We study the impurity states in bilayer graphene in the unitary limit using Green's function method. Unlike in single layer graphene, the presence of impurities at two non-equivalent sites in bilayer graphene produce different impurity states which is understood as the change in the band structure due to interlayer hopping of electrons. The impurity states can also be tuned by changing the band structure of bilayer grahene through external electric field bias.