Finite-size correction in many-body electronic structure calculations
Hendra Kwee, Shiwei Zhang, Henry Krakauer

TL;DR
This paper introduces a simple post-processing method to correct finite-size errors in many-body electronic structure calculations, significantly improving accuracy for insulators, semiconductors, and metals.
Contribution
A new parametrization of the finite-size exchange-correlation functional enables effective correction of finite-size effects in many-body calculations.
Findings
Significantly improved finite-size corrections for P$_2$ in a supercell
Enhanced accuracy in semiconducting Si calculations
Effective correction method for metallic Na
Abstract
Finite-size (FS) effects are a major source of error in many-body (MB) electronic structure calculations of extended systems. A method is presented to correct for such errors. We show that MB FS effects can be effectively included in a modified local density approximation calculation. A parametrization for the FS exchange-correlation functional is obtained. The method is simple and gives post-processing corrections that can be applied to any MB results. Applications to a model insulator (P in a supercell), to semiconducting Si, and to metallic Na show that the method delivers greatly improved FS corrections.
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