Making a field effect transistor on a single graphene nanoribbon by selective doping

TL;DR

This paper demonstrates how selective edge doping of graphene nanoribbons can induce a metal-semiconductor transition, enabling the design of nanoscale field effect transistors with specific electronic properties.

Contribution

It introduces a novel method of creating graphene nanoribbon-based FETs through edge doping, supported by first-principles calculations.

Findings

Edge doping induces metal-semiconductor transition.

Constructed a prototype FET with specific I-V characteristics.

First-principles calculations validate device performance.

Abstract

Using first-principle electronic structure calculations, we show a metal- semiconductor transition of a metallic graphene nanoribbon with zigzag edges induced by substitutional doping of Nitrogen or Boron atoms at the edges. A field effect transistor consisting of a metal-semiconductor-metal junction can then be constructed by selective doping of the ribbon edges. The current-voltage characteristics of such a prototype device is determined by the first-principle quantum transport calculations.