Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene

TL;DR

This paper provides a theoretical analysis of phonon scattering effects on electron mobility in extrinsic 2D graphene, revealing temperature-dependent resistivity behavior and high room temperature mobility values.

Contribution

It introduces a detailed theoretical calculation of phonon-limited mobility in doped graphene, highlighting temperature and carrier density effects and low-temperature behavior.

Findings

Resistivity is linear in temperature above 50 K.

Room temperature mobility exceeds 10^5 cm^2/Vs.

Low-temperature resistivity follows a T^4 dependence.

Abstract

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find a temperature dependent phonon-limited resistivity $\rho_{ph}(T)$ to be linear in temperature for $T\agt 50 K$ with the room temperature intrinsic mobility reaching values above $10^5$ cm$^2/Vs$. We comment on the low-temperature Bloch-Gr\"{u}neisen behavior where $\rho_{ph}(T) \sim T^4$ for unscreened electron-phonon coupling.