Terahertz detection with delta-doped GaAs/AlAs multiple quantum wells
D. Seliuta, B. Cechavicius, J. Kavaliauskas, G. Krivaite, I., Grigelionis, S. Balakauskas, G. Valusis, B. Sherliker, M. P. Halsall, M., Lachab, S. P. Khanna, P. Harrison, and E. H. Linfield
TL;DR
This paper presents a method for terahertz detection using delta-doped GaAs/AlAs quantum wells, achieving high sensitivity at cryogenic temperatures and analyzing electric fields via optical spectra.
Contribution
It introduces a novel terahertz detector based on delta-doped quantum wells with detailed electric field characterization.
Findings
Sensitivity up to 1 V/W in 4.2-7.3 THz range
Observation of Franz-Keldysh oscillations for electric field estimation
Electric field varies from 10 kV/cm to 26 kV/cm depending on design and temperature
Abstract
The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electro-reflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.
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Taxonomy
TopicsTerahertz technology and applications · Spectroscopy and Laser Applications · Semiconductor Quantum Structures and Devices