Development of a Vacuum Ultra-Violet Laser-Based Angle-Resolved Photoemission System with a Super-High Energy Resolution Better Than 1 meV
Guodong Liu, Guiling Wang, Yong Zhu, Hongbo Zhang, Guochun Zhang,, Xiaoyang Wang, Yong Zhou, Wentao Zhang, Haiyun Liu, Lin Zhao, Jianqiao Meng,, Xiaoli Dong, Chuangtian Chen, Zuyan XU, X. J. Zhou
TL;DR
This paper presents a novel VUV laser-based ARPES system achieving unprecedented energy resolution below 1 meV, enabling detailed electronic structure studies of materials like high-temperature superconductors.
Contribution
The paper introduces the first VUV laser-based ARPES system with a photon energy of 6.994 eV and energy resolution better than 1 meV, utilizing a new non-linear crystal for second harmonic generation.
Findings
Achieved energy resolution better than 1 meV.
Demonstrated high momentum resolution and photon flux.
Enhanced bulk sensitivity in measurements.
Abstract
The design and performance of the first vacuum ultra-violet (VUV) laser-based angle-resolved photoemission (ARPES) system are described. The VUV laser with a photon energy of 6.994 eV and bandwidth of 0.26 meV is achieved from the second harmonic generation using a novel non-linear optical crystal KBe2BO3F2 (KBBF). The new VUV laser-based ARPES system exhibits superior performance, including super-high energy resolution better than 1 meV, high momentum resolution, super-high photon flux and much enhanced bulk sensitivity, which are demonstrated from measurements on a typical Bi2Sr2CaCu2O8 high temperature superconductor. Issues and further development related to the VUV laser-based photoemission technique are discussed.
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