Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors

TL;DR

This paper demonstrates spin-dependent scattering measurements in silicon transistors, revealing a potential method for reading donor spin states crucial for silicon-based quantum computing.

Contribution

It introduces electrically detected magnetic resonance to observe spin-dependent scattering in silicon transistors with neutral donors, advancing quantum readout techniques.

Findings

Resonant changes in source-drain voltage indicate spin-dependent scattering.

Detection of spin resonance in conduction electrons and donor-bound electrons.

Potential application in quantum computer spin-state readout.

Abstract

We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where the spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering as a mechanism for the readout of donor spin-states in silicon based quantum computers.