Nano-Sim: A Step Wise Equivalent Conductance based Statistical Simulator for Nanotechnology Circuit Design

TL;DR

Nano-Sim introduces a stepwise equivalent conductance-based statistical simulation method for nanotechnology circuits, effectively handling non-monotonic I-V characteristics and NDR issues, with significant speed improvements over existing tools.

Contribution

It presents a novel simulation approach tailored for nanotechnology devices with uncertain properties and NDR, enhancing simulation efficiency and accuracy.

Findings

Achieves 20-30 times faster simulation than existing tools.

Effectively models devices with non-monotonic I-V characteristics.

Handles negative differential resistance in nanodevices.

Abstract

New nanotechnology based devices are replacing CMOS devices to overcome CMOS technology's scaling limitations. However, many such devices exhibit non-monotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance. This paper proposes a new circuit simulation approach that can effectively simulate nanotechnology devices with uncertain input sources and negative differential resistance (NDR) problem. The experimental results show a 20-30 times speedup comparing with existing simulators.