Aharanov-Bohm excitons at elevated temperatures in type-II ZnTe/ZnSe quantum dots
I. R. Sellers, V. R. Whiteside, I. L. Kuskovsky, A. O. Govorov, B. D., McCombe

TL;DR
This study demonstrates the robust Aharonov-Bohm effect in type-II ZnTe/ZnSe quantum dots at temperatures up to 180K, significantly higher than previously observed in semiconductor structures, indicating potential for high-temperature quantum coherence.
Contribution
The paper reports the first observation of the Aharonov-Bohm effect in semiconductor quantum dots at temperatures as high as 180K, surpassing previous temperature limits.
Findings
Aharonov-Bohm oscillations persist up to 180K.
Quantum dots exhibit large, persistent energy and intensity oscillations.
The AB effect is more robust in these structures than in lithographically defined rings.
Abstract
Optical emission from type-II ZnTe/ZnSe quantum dots demonstrates large and persistent oscillations in both the peak energy and intensity indicating the formation of coherently rotating states. Furthermore, the Aharanov-Bohm (AB) effect is shown to be remarkably robust and persists until 180K. This is at least one order of magnitude greater than the typical temperatures in lithographically defined rings. To our knowledge this is the highest temperature at which the AB effect has been observed in semiconductor structures.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Quantum Information and Cryptography
