Inelastic Scattering and Spin Polarization in Dilute Magnetic Semiconductor (Ga,Mn)Sb
Raghava P. Panguluri, B. Nadgorny, T. Wojtowicz, X. Liu, and J. K., Furdyna
TL;DR
This paper investigates the spin polarization and inelastic scattering effects in (Ga,Mn)Sb dilute magnetic semiconductors using PCAR, revealing a spin polarization of about 57% and spectrum broadening.
Contribution
It provides the first detailed measurement of spin polarization and inelastic scattering effects in epitaxial (Ga,Mn)Sb films.
Findings
Spin polarization of 57% measured in (Ga,Mn)Sb.
Spectrum broadening observed indicating inelastic scattering.
Inelastic effects influence the electronic properties of (Ga,Mn)Sb.
Abstract
The Point Contact Andreev Reflection (PCAR) technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While in (In,Mn)Sb conventional Andreev reflection has been demonstrated, in (Ga,Mn)As quasiparticle density of states (DOS) broadening has been observed, possibly due to inelastic scattering effects. Here, we investigate the spin polarization, magnetic, and transport properties of epitaxially grown (Ga,Mn)Sb films with the Curie temperature of ~ 10K. The spin polarization of 57+/-5% was measured. Spectrum broadening in (Ga,Mn)Sb has also been observed.
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