Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr_{x}Ti_{1-x})O_{3} thin films

TL;DR

This study examines how Zr concentration affects polarization switching in (111)-preferred polycrystalline Pb(Zr_xTi_{1-x})O_3 thin films, revealing that Zr substitution influences local fields and domain switching behavior.

Contribution

It introduces a model explaining polarization switching behaviors based on Lorentzian distributions and links Zr substitution to local field variations and switching ease.

Findings

Zr substitution broadens local field distributions.

Polarization switching behavior fits Lorentzian distribution models.

Zr ions facilitate easier ferroelectric domain switching.

Abstract

We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxTi1-x)O3 thin films with various Zr concentrations. We could explain all the polarization switching behaviors well by assuming Lorentzian distributions in the logarithmic polarization switching time [Refer to J. Y. Jo et al., Phys. Rev. Lett. (in press)]. Based on this analysis, we found that the Zr ion-substitution for Ti ions would induce broad distributions in the local field due to defect dipoles, which makes the ferroelectric domain switching occur more easily.