Dissipative dynamics of the semiconductor-cavity QED with q-deformed bosons in the dispersive approximation

TL;DR

This paper provides an analytical study of the dissipative dynamics in semiconductor-cavity QED systems using q-deformed bosons, highlighting how exciton number and dissipation influence non-classical properties.

Contribution

It introduces an analytical solution for the dissipative dynamics of high-density excitons coupled to a cavity field using q-deformed bosonic operators.

Findings

Non-classical properties are significantly affected by exciton number.

Dissipation impacts molecule-field entanglement and squeezing.

Analytical solutions describe the system's behavior at zero temperature.

Abstract

In this paper we give fully analytical description of the dynamics of a collection of $N$-Frenkel excitons in high density regime dispersively coupled to a single mode cavity field, in the presence of both exciton and cavity-field dissipations. By using excitonic operators as q-deformed bosonic operators for the system, we solve analytically the Liouville equation for the density operator at zero temperature and investigate the influence of the number of excitons and the effect of both dissipations on dynamical behavior of the system. We use the solution of master equation to explore the dissipative dynamics of non-classical properties such as, molecule-field entanglement, quadrature squeezing of the field, and molecular dipole squeezing. We find that the non-classical properties are strongly affected by the number of excitons and also by the existence of both dissipations.