Single-electron quantum dot in Si/SiGe with integrated charge-sensing

TL;DR

This paper reports the successful fabrication and measurement of a single-electron quantum dot in Si/SiGe, demonstrating charge sensing and confirming single-electron occupancy, advancing silicon-based quantum computing technologies.

Contribution

First demonstration of a single-electron quantum dot in Si/SiGe with integrated charge sensing for quantum information applications.

Findings

Single-electron occupancy confirmed by charge sensing

Transport measurements correlated with charge state

Advancement towards silicon-based spin qubits

Abstract

Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge-sensing from an integrated quantum point contact, and this charge-sensing is used to confirm single-electron occupancy in the quantum dot.