Mechanism of Ambipolar Field-Effect Transistors on One-Dimensional Organic Mott Insulators

TL;DR

This paper models ambipolar field-effect transistors on 1D organic Mott insulators using the Hubbard model, revealing how Schottky barriers influence their current-voltage behavior.

Contribution

It introduces a theoretical framework combining the Hubbard model with electrode effects to explain ambipolar FET characteristics in Mott insulators.

Findings

Reproduces ambipolar behavior in a 1D Hubbard model

Links Schottky barriers to current-voltage characteristics

Provides insight into metal-Mott-insulator interfaces

Abstract

The experimentally observed, ambipolar field-effect characteristics of Mott insulators are reproduced in the one-dimensional Hubbard model attached to a tight-binding model for source and drain electrodes. The formation of Schottky barriers, originating from the work-function difference, is taken into account by a potential satisfying the Poisson equation with an appropriate boundary condition. Then, these field-effect characteristics are shown to be related by unique current-voltage characteristics of metal-Mott-insulator interfaces.