Graphene-on-Sapphire and Graphene-on-Glass: Raman Spectroscopy Study

TL;DR

This study compares Raman signatures of graphene on sapphire and glass substrates with those on GaAs and Si/SiO2, revealing substrate-dependent spectral shifts crucial for graphene characterization and device applications.

Contribution

It provides new insights into how different substrates affect graphene's Raman spectra, aiding in better material characterization.

Findings

G peak shifts by ~5 cm-1 on sapphire

G peak splits into doublets on glass

Spectral differences impact graphene device applications

Abstract

The room-temperature Raman signatures from graphene layers on sapphire and glass substrates were compared with those from graphene on GaAs substrate and on the standard Si/SiO2 substrate, which served as a reference. It was found that while G peak of graphene on Si/SiO2 and GaAs is positioned at 1580 cm-1 it is down-shifted by ~5 cm-1 for graphene-on-sapphire (GOS) and, in many cases, splits into doublets for graphene-on-glass (GOG) with the central frequency around 1580 cm-1. The obtained results are important for graphene characterization and its proposed graphene applications in electronic devices.